| PART |
Description |
Maker |
| 1N5232A 1N5221A 1N5221B 1N5221C 1N5221D 1N5270B 1N |
22 V, 5.6 mA, zener diode
13 V, 9.5 mA, zener diode
36 V, 3.4 mA, zener diode
3.3 V, 20 mA, zener diode
30 V, 4.2 mA, zener diode
15 V, 8.5 mA, zener diode
8.7 V, 20 mA, zener diode
2.5 V, 20 mA, zener diode
62 V, 2.0 mA, zener diode
3.3 V, 20 mA, zener diode
19 V, 6.6 mA, zener diode
33 V, 3.8 mA, zener diode
56 V, 2.2 mA, zener diode
11 V, 20 mA, zener diode
28 V, 4.5 mA, zener diode
24 V, 5.2 mA, zener diode
60 V, 2.1 mA, zener diode
60 V, 2.1 mA, zener diode
39 V, 3.2 mA, zener diode
39 V, 3.2 mA, zener diode
17 V, 7.4 mA, zener diode
14 V, 9.0 mA, zener diode
12 V, 20 mA, zener diode
18 V, 7.0 mA, zener diode
5.6 V, 20 mA, zener diode
82 V, 1.5 mA, zener diode
87 V, 1.4 mA, zener diode
4.7 V, 20 mA, zener diode
47 V, 2.7 mA, zener diode
7.5 V, 20 mA, zener diode
110 V, 1.1 mA, zener diode
2.8 V, 20 mA, zener diode
24 V, 5.2 mA, zener diode
28 V, 4.5 mA, zener diode
25 V, 5.0 mA, zener diode
1N52 SERIES ZENER DIODES
FKC 2.5/6-STF
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 250μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
2.5 V, 20 mA, zener diode
36 V, 3.4 mA, zener diode
9.1 V, 20 mA, zener diode
11 V, 20 mA, zener diode
62 V, 2.0 mA, zener diode
110 V, 1.1 mA, zener diode
3.9 V, 20 mA, zener diode
82 V, 1.5 mA, zener diode
16 V, 7.8 mA, zener diode
12 V, 20 mA, zener diode
3.9 V, 20 mA, zener diode
43 V, 3.0 mA, zener diode
68 V, 1.8 mA, zener diode
68 V, 1.8 mA, zener diode
56 V, 2.2 mA, zener diode
30 V, 4.2 mA, zener diode
43 V, 3.0 mA, zener diode
6.2 V, 20 mA, zener diode
3.0 V, 20 mA, zener diode
33 V, 3.8 mA, zener diode
14 V, 9.0 mA, zener diode
8.2 V, 20 mA, zener diode
2.8 V, 20 mA, zener diode
6.8 V, 20 mA, zener diode
75 V, 1.7 mA, zener diode
10 V, 20 mA, zener diode
47 V, 2.7 mA, zener diode
75 V, 1.7 mA, zener diode
51 V, 2.5 mA, zener diode
100 V, 1.3 mA, zener diode
8.7 V, 20 mA, zener diode
22 V, 5.6 mA, zener diode
|
LRC[Leshan Radio Company]
乐山无线电股份有限公
Leshan Radio Company, Ltd.
|
| MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5221B |
Zeners 6.8 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3-32V Dual Operational Amplifier, Ta = 0 to 70°C; Package: Micro8™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 4000
3.9V, 0.35W Zener Diode
27V, 0.35W Zener Diode
6.8V, 0.35W Zener Diode
33V, 0.35W Zener Diode
13V, 0.35W Zener Diode
9.1V, 0.35W Zener Diode
15V, 0.35W Zener Diode
30V, 0.35W Zener Diode
16V, 0.35W Zener Diode
3.3V, 0.35W Zener Diode
20V, 0.35W Zener Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| BZX84C5V1 BZX84C6V2 BZX84C9V1 BZX84C4V7 BZX84C11 B |
8.2V, 0.35W Zener Diode
Zeners
5.1V, 0.35W Zener Diode
10V, 0.35W Zener Diode
11V, 0.35W Zener Diode
12V, 0.35W Zener Diode
13V, 0.35W Zener Diode
15V, 0.35W Zener Diode
16V, 0.35W Zener Diode
18V, 0.35W Zener Diode
20V, 0.35W Zener Diode
22V, 0.35W Zener Diode
4.7V, 0.35W Zener Diode
3.9V, 0.35W Zener Diode
6.2V, 0.35W Zener Diode
5.6V, 0.35W Zener Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| HZ36L HZ6L HZ12C3L HZ7L HZ11L HZ12L HZ15L HZ16L HZ |
SWITCH TACT 6MM 100GF H=4.3MM
Silicon Epitaxial Planar Zener Diode for Low Noise Application
Diodes>Zener
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| CMH02 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 11.1 to 11.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 开关电源的应用
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 11.1 to 11.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Switching Mode Power Supply Applications
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| MIC5219-3.1BM5 MIC5219-2.5BM5 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.8 to 6.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.7 to 6.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.8 to 6.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 3.1 V FIXED POSITIVE LDO REGULATOR, 0.6 V DROPOUT, PDSO5
|
Micrel Semiconductor,Inc.
Micrel Semiconductor, Inc.
MICREL INC
|
| STR751FR2T6 STR751FR2H6 STR755FR1H6 STR755FXX STR7 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 34.01 to 35.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 33.40 to 35.13; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.70 to 6.97; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 12.4 to 13.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.47 to 3.68; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.68 to 31.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 31.49 to 33.11; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 32.79 to 34.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 36.00 to 37.85; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 30.32 to 31.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.02 to 30.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.07 to 8.41; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
意法半导
|
| DF5A3.6CJE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护外延平面
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD Epitaxial Planar Type
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A8.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| KDZ93V |
ZENER DIODE CONSTANT VOLTAGE REGULATION APPLICATION
|
KEC(Korea Electronics)
|
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