| PART |
Description |
Maker |
| 40TR12B |
SENSOR / ULTRASONIC / 40KHZ / TRAN
|
Jameco
|
| IRKT500-16 IRKH500-08 IRKH500-12 IRKH500-14 IRKH50 |
1600V 500A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a Super MAGN-A-Pak package
1200V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
1400V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
800V 500A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a Super MAGN-A-Pak package
800V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
800V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
SUPER MAGN-A-pak Power Modules
1200V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
1600V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
1400V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
1600V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
|
IRF[International Rectifier]
|
| NESG3031M05 NESG3031M05-T1 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| APT5030AVR |
POWER MOS V 500V 14.7A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT4015AVR |
POWER MOS V 400V 25.5A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10086BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT5022AVR |
POWER MOS V 500V 21A 0.220 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6030BVR APT6030 |
POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
