| PART |
Description |
Maker |
| APT12040L2LL |
POWER MOS 7 1200V 30A 0.400 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology Ltd.
|
| LSL9R30120G2 ISL9R30120G2 ISL9R30120G2NL |
30A, 1200V STEALTH DIODE, TO247 PACKAGE
30A, 1200V Stealth⑩ Diode
ISL9R30120G2
30A, 1200V Stealth?/a> Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT5016BLL APT5016SLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
POWER MOS 7 500V 30A 0.160 Ohm
|
Advanced Power Technology
|
| APT5017BLC APT5017SLC APT10086BLC APT10086SLC |
POWER MOS VI 500V 30A 0.170 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT12060LVR APT12060B2VR |
POWER MOS V 1200V 20A 0.600 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| NGTB30N120IHL |
IGBT 1200V 30A FS1 Induction Heating
|
ON Semiconductor
|
| APT8043SLL APT8043BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
THYRISTOR PROTECT BIDIR 30A SMB 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 800V 20A 0.430 Ohm
|
Advanced Power Technolo...
Advanced Power Technology, Ltd.
|
| APT12057JLL |
POWER MOS 7 1200V 19A 0.570 Ohm
|
Advanced Power Technology
|
| RJK60S7DPK-M0 RJK60S7DPK-M0-T0 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGW30NC120HD0710 STGW30NC120HD |
N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT
|
STMicroelectronics
|
