| PART |
Description |
Maker |
| LSL9R30120G2 ISL9R30120G2 ISL9R30120G2NL |
30A, 1200V STEALTH DIODE, TO247 PACKAGE
30A, 1200V Stealth⑩ Diode
ISL9R30120G2
30A, 1200V Stealth?/a> Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| ISL9K30120 ISL9K30120G3 |
30A, 1200V Stealth?/a> Dual Diode
30A, 1200V Stealth⑩ Dual Diode
30A, 1200V Stealth Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| RURG30120CC FN3400 |
30A/ 1200V Ultrafast Dual Diode
30A, 1200V Ultrafast Dual Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RJK0305DPB-02-15 |
30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK03M5DPA-00-J5A |
30V, 30A, 6.5mmax.N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| APT12045L2VR |
POWER MOS V 1200V 26A 0.450 Ohm
|
Advanced Power Technology
|
| STGW30NC120HD0710 STGW30NC120HD |
N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT
|
STMicroelectronics
|
| APT30D120B ADVANCEDPOWERTECHNOLOGYLTD.-APT30D120B |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 1200V 30A
|
Advanced Power Technology
|
| STGW30NC120HD |
N-CHANNEL 30A - 1200V - TO-247 VERY FAST PowerMESH-TM IGBT
|
ST Microelectronics
|
| HFA30PB120 |
1200V 30A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
|
International Rectifier
|
