| PART |
Description |
Maker |
| 2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH SWITCHING
P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
| RJK03M4DPA-00-J5A RJK03M4DPA-15 |
30V, 35A, 4.6mΩmax.N Channel Power MOS FET
30V, 35A, 4.6mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MSP3407 |
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSP3401 |
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSN2306 |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| RJK0305DPB-02-15 |
30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N2DPA |
30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
