| PART |
Description |
Maker |
| OH004 OH10004OH004 |
GaAs device - GaAs Hall Devices
|
Matsshita / Panasonic
|
| GN04042N |
GaAs device - GaAs MMICs - Switch GaAs设备-砷化镓微波集成电开
|
Infineon Technologies AG
Panasonic
|
| GN04022N |
GaAs device - GaAs MMICs - Switch
|
Panasonic
|
| HDSM-291C HDSM-291H HDSM-291L HDSM-293H HDSM-293F |
The HDSM-291x/293x is a dual digit display of 0.28 (7.0mm) height. This device utilizes AlInGaP / GaAs chips and has a grey surface with white segments.
|
AVAGO TECHNOLOGIES LIMITED
|
| KSY13 KSY13E7502 KSY13-E7502 |
MAGNETIC FIELD SENSOR-HALL EFFECT, 0-100mT, 0.09-0.14V, RECTANGULAR, SURFACE MOUNT
GaAs Hall Sensor with high sensitivit...
|
Infineon Technologies AG
|
| OH10023 |
GaAs hall element
|
Panasonic
|
| KSY14 |
GaAs Hall Sensor with high sensitivit...
|
Infineon
|
| LT251A |
GaAs Hall IC for Noncontact Swich(Unidirectional magnetic field-type)
GaAs Hall IC for Noncontact Swich (Unidirectional magnetic field-type)
|
Sharp Corporation
Sharp Electrionic Components
|
| LT260 LT260A |
GaAs Hall IC for Noncontact Switch(Alternating magnetic field-type)
GaAs Hall IC for Noncontact Switch (Alternating magnetic field-type)
|
Sharp Electrionic Compo...
SHARP[Sharp Electrionic Components]
|
| TMC800A TMC1500A TMC500A TMC1000A TMC100A TMC1200A |
Highly reliable Hall Effect device
Topstek Current Transducer
|
Topstek Inc.
|
| Q62703-Q78 LD260 LD262 LD263 LD264 LD265 LD266 LD2 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 砷化镓红外Lumineszenzdioden - Zeilen砷化镓红外发射器阵列
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| Q68000-A7851 IRL80A IRL80 |
GaAs-Infrarot-Sendediode GaAs Infrared Emitter
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
