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KBE00S009M-D411 - 1Gb NAND x 2 256Mb Mobile SDRAM x 2

KBE00S009M-D411_2358688.PDF Datasheet


 Full text search : 1Gb NAND x 2 256Mb Mobile SDRAM x 2
 Product Description search : 1Gb NAND x 2 256Mb Mobile SDRAM x 2


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PART Description Maker
KBE00S009M-D411 KBE00S009M-D4110 1Gb NAND x 2 256Mb Mobile SDRAM x 2
SPECIALTY MEMORY CIRCUIT, PBGA137
SAMSUNG SEMICONDUCTOR CO. LTD.
K5D5657DCM-F015 K5D5657DCM-F0CL MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
SAMSUNG[Samsung semiconductor]
Samsung Electronics
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Samsung Electronic
K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
H55S1G32MFP-60 H55S1G32MFP-75 H55S1G32MFP-A3 H55S1 1Gb (32Mx32bit) Mobile SDRAM
Hynix Semiconductor
NT6TM64M16CI-G0 NT6TM128M16CI-G0 NT6TN16M16CI-G0 N Commercial Mobile DDR 1Gb SDRAM
Nanya Technology Corpor...
HY27UA081G1M HY27SA161G1M HY27SA081G1M NAND Flash - 1Gb
Hynix Semiconductor
H5MS2622JFR H5MS2532JFR 256Mb (8Mx32bit) Mobile DDR SDRAM
Hynix Semiconductor
http://
MT29C4G48MAPLCCA-6IT MT29C4G48MAPLCJQ-6IT MT29C2G2 NAND Flash and Mobile LPDRAM
Micron Technology
HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank
2.5 V 184-pin Registered DDR-I SDRAM Modules
INFINEON[Infineon Technologies AG]
 
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KBE00S009M-D411 MARKING KBE00S009M-D411 resistor KBE00S009M-D411 complimentary against KBE00S009M-D411 Megabit KBE00S009M-D411 poliester
 

 

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