| PART |
Description |
Maker |
| TIM5964-8UL |
HIGH POWER P1dB=39.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM7785-4UL09 |
HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM5359-8UL |
HIGH POWER P1dB=39.5dBm at 5.3GHz to 5.9GHz
|
Toshiba Semiconductor
|
| TIM6472-12UL09 |
HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| AWT6109 AWT6109M5P8 AWT6109_REV_2.2 |
From old datasheet system
KPCS CDMA 3.5V/28.5dBm Linear Power Amplifier Module
The AWT6109 is a 3.5V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets.
|
ANADIGICS, Inc.
Anadigics Inc
|
| AWT6275 AWT6275RM20P8 |
HELP IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
| TIM7179-60SL |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| RFFM6404 RFFM6404PCK-410 RFFM6404SB RFFM6404SQ RFF |
2.5V to 4.5V, ISM Band, 27.5dBm, 430MHz to 450MHz Transmit/Receive Module
|
RF Micro Devices
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
|
