PART |
Description |
Maker |
TIM7179-16UL |
HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
TIM4450-12UL |
HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
TIM4450-8UL |
HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
TIM1414-10LA-252 |
HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz
|
Toshiba Semiconductor
|
TIM6472-8UL09 |
HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
TIM3438-12UL |
HIGH POWER P1dB=41.5dBm at 3.4GHz to 3.8GHz
|
Toshiba Semiconductor
|
TIM6472-16UL |
HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
AWT6109 AWT6109M5P8 AWT6109_REV_2.2 |
From old datasheet system KPCS CDMA 3.5V/28.5dBm Linear Power Amplifier Module The AWT6109 is a 3.5V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets.
|
ANADIGICS, Inc. Anadigics Inc
|
AWT613608 AWT6136RM5P8 AWT6136RM5P9 |
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
MCO500-18IO1 MCO500 MCO500-12IO1 MCO500-14IO1 MCO5 |
1800V high power thyristor module 1600V high power thyristor module 1400V high power thyristor module 1200V high power thyristor module High Power Thyristor Modules
|
IXYS[IXYS Corporation]
|
BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State GESS[GE Solid State] ETC
|