| PART |
Description |
Maker |
| STT6602 |
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| RJK03M3DPA-00-J5A RJK03M3DPA-15 |
30V, 40A, 3.9mΩmax.N Channel Power MOS FET
30V, 40A, 3.9mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ325 2SJ325-Z-E2 2SJ325-Z-E2JM 2SJ325-Z-T1 2SJ32 |
P-channel enhancement type
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-252VAR
|
NEC Corp.
|
| FDB7030BLS FDP7030BLS FDB7030BLSL86Z |
56 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
30V N-Channel PowerTrench?SyncFET
30V N-Channel PowerTrenchÒ SyncFET™
30V N-Channel PowerTrench㈢SyncFET⑩
30V N-Channel PowerTrench SyncFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| MSN3402 |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSN2306 |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSC0311WE |
30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| FDS887607 FDS8876 |
N-Channel PowerTrench? MOSFET 30V, 12.5A, 8.2mΩ
N-Channel PowerTrench庐 MOSFET 30V, 12.5A, 8.2m惟
N-Channel PowerTrench㈢ MOSFET 30V, 12.5A, 8.2mヘ
|
Fairchild Semiconductor
|
| FDP6670AS08 FDB6670AS FDP6670AS |
30V N-Channel PowerTrench? SyncFET?/a>
30V N-Channel PowerTrench庐 SyncFET??/a>
30V N-Channel PowerTrench㈢ SyncFET⑩
|
Fairchild Semiconductor
|
| RJK03E9DPA RJK03E9DPA-00-J5A |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FDB8160 FDB8160-F085 FDB8160F085 |
30V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 30V, 80A, 1.8mΩ
|
Fairchild Semiconductor
|
