| PART |
Description |
Maker |
| IRFZ40 IRFZ42 |
(IRFZ40 / IRFZ42) Power Field Effect Transistors
|
Motorola Semiconductor
|
| IRFZ44 IRFZ45 |
(IRFZ40 - IRFZ45) N-Channel Power MOSFETS
|
Samsung Electronics
|
| MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 |
RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| MTD6N15 MTD6N15-1 MTD6N15T4 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount
TMOS Power 150V .3R
|
ON Semiconductor
|
| MRF18060AL MRF18060A MRF18060ALR3 MRF18060ALSR3 |
RF Power Field Effect Transistors
1805?1880 MHz, 60 W, 26 V Lateral N?Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
Motorola Semiconductor Products
|
| MRF9045LR1 MRF9045LSR1 |
945 MHz, 45 W, 28 V Lateral N–Channel Broadband RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTORS
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| APTGT35X120T3G |
3 Phase bridge Trench Field Stop IGBT? Power Module
3 Phase bridge Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT75A60T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT25X120T3G |
3 Phase bridge Trench Field Stop IGBT? Power Module
3 Phase bridge Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT50A170T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
