| PART |
Description |
Maker |
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| AMS431L AMS431LA AMS431LAL AMS431LAM AMS431LAM1 AM |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:Yes .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No
1.2V SHUNT REGULATOR
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| KI4558DY |
PIN Configuration Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KI4562DY |
PIN Configuration Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -12V
|
TY Semiconductor Co., Ltd
|
| PNP3055E |
PowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A.
|
Philips
|
| FTD2011 |
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V
|
TY Semiconductor Co., Ltd
|
| SI9926BDY |
Drain-Source Voltage VDS V Gate-Source Voltage VGS -10 V
|
TY Semiconductor Co., Ltd
|
| KRF8910 |
Drain- Source Voltage VDS 20 V Gate-to-Source Voltage VGS -20 V
|
TY Semiconductor Co., Ltd
|
| PT7A7515 PT7A7513 PT7A7535 PT7A7531 |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:67A; On-Resistance, Rds(on):7.9mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:D2PAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
3.08V Reset Active Low Supervisor
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
|
| 2SK2110 |
N-Channel MOSFET
Low on-resistance RDS(on)=1.5 MAX High switching speed Drain to source voltage VDSS 100
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| ADM6711 ADM6711LAKS ADM6711MAKS ADM6711RAKS ADM671 |
XSTR, FET BS170TMOS SWITCHING
PHOTO TRANSISTOR, NPN, SILICON; Channels, No. of:1; Output type:Transistor; Current, input:50mA; Voltage, output max:70V; Case style:3-TO-18; Mounting type:Through Hole RoHS Compliant: Yes 微处理器监控电路4引脚SC70
Microprocessor Supervisory Circuit in 4-Lead SC70 微处理器监控电路4引脚SC70
RES 1K-OHM 5% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
SENSOR, OPTICAL, TRANSISTOR O/P; RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:0.5A; On-Resistance, Rds(on):2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-92; Drain-Source Breakdown Voltage:60V RoHS Compliant: No
Microprocessor Supervisory Circuit in 4-Lead SC70, Active-Low Push-Pull Output
Microprocessor Supervisory Circuit in 4-Lead SC70, Active-Low Open-Drain Output
|
Analog Devices, Inc.
AD[Analog Devices]
|
| KI6968BEDQ |
Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
