PART |
Description |
Maker |
KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory 512K x 8 bit NAND Flash Memory
|
Samsung semiconductor Samsung Electronic
|
K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位,8米16位NAND闪存 16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
KM29W32000T |
4M x 8 Bit NAND Flash Memory(4M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R |
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48 8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44 Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
MT29F8G08ABCBB |
NAND Flash Memory
|
Micron
|
MT29F16G08ABACA |
NAND Flash Memory
|
Micron
|
MT29F4G08AAA |
NAND Flash Memory
|
Micron
|
KM29U64000T KM29U64000IT |
8M x 8 Bit NAND Flash Memory
|
Samsung Electronic
|
K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0 |
8M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KM29W32000TS |
4M x 8-Bit NAND Flash Memory
|
Samsung Semiconductor
|
KM29U64000IT KM29U64000T |
8M x 8 Bit NAND Flash Memory
|
Samsung semiconductor
|
KM29V64001TS KM29V64001RS |
8M X 8 BIT NAND FLASH MEMORY
|
Samsung semiconductor
|