PART |
Description |
Maker |
M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 ST Microelectronics
|
M29F400B-120M1R M29F400B-120M1TR M29F400B-120M3R M |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M29W400BB M29W400BB120M1T M29W400BB120M6T M29W400B |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M29F400BB45N1 M29F400BB45N1T M29F400BB45N3 M29F400 |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Dual Precision Low-Power Single Supply Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Automotive Catalog Excalibur High-Speed Low-Power Precision Operational Amplifiers 8-SOIC -40 to 125 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x8256Kb的x16插槽,启动座单电源闪 Excalibur High-Speed Low-Power Precision Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 High-Speed, Low-Power, Precision Single Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Excalibur High-Speed Low-Power Precision Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽,启动座单电源闪
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
M36DR432AD M36DR432AD10ZA6T M36DR432AD12ZA6T M36DR |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M29F800D M29F800DB M29F800DB55N1F M29F800DT90M6E - |
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 5V Supply Flash Memory 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory 8兆(1兆x812KB的x16插槽,引导块V电源快闪记忆
|
ST Microelectronics STMicroelectronics N.V.
|
MPC2104P MPC2105P |
(MPC2104P / MPC2105P) 256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB/512KB BurstRAM二级缓存模块为PowerPC制备/ CH旺平
|
Motorola, Inc. Motorola Mobility Holdings, Inc.
|
M29W800DB |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY 8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics STMicroelectronics
|