| PART |
Description |
Maker |
| PEB2255 |
E1/T1/J1 Framer and Line Interface Component for Long and Short Haul Applications
DATACOM, FRAMER, PQFP80
|
Infineon Technologies A...
INFINEON TECHNOLOGIES AG
|
| WP06R WP06R12D05 WP06R12D12 WP06R12D15 WP06R12S05 |
High Density 5-6 Watt Wide Input Range DC/DC Converter
5-6 WATT HIGH DENSITY, WIDE INPUT RANGE DC/DC CONVERTER
5-6 WATT HIGH DENSITY/ WIDE INPUT RANGE DC/DC CONVERTER
RECTIFIER SCHOTTKY SINGLE 2A 40V 50A-Ifsm 0.55Vf 0.5A-IR PowerDI-123 3K/REEL
|
CANDD[C&D Technologies]
|
| ISPLSI1016EA ISPLSI1016EA-100LJ44 ISPLSI1016EA-100 |
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
In-System Programmable High Density PLD
200 MHz in-system prommable high density PLD
|
Lattice Semiconductor
|
| HDSOLDERCUP HDVERTICAL 780-M26-113R051 780-MYY-113 |
MALE-HIGH DENSITY
MALE-HIGH DENSITY-MACHINED CONTACTS-VERTICAL
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFAST?/a> High Density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| MACH211SP-12 MACH211SP-7JC MACH211SP-7VC MACH211SP |
RES 35.7K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
SCREW MACHINE SLOTTED 6-32X3/4
High-Density EE CMOS Programmable Logic EE PLD, 16 ns, PQCC44
High-Density EE CMOS Programmable Logic 高密度电子工程CMOS可编程逻辑
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
| ISPLSI5512VA-100LB272 ISPLSI5512VA-70LQ208 5512VA |
70 MHz in-system prommable 3.3V superWIDE high density PLD
In-System Programmable 3.3V SuperWIDE⑩ High Density PLD
In-System Programmable 3.3V SuperWIDE High Density PLD
110 MHz in-system prommable 3.3V superWIDE high density PLD
|
LATTICE[Lattice Semiconductor]
|
| DK50-1.0 DK50-1.0M DK44-1.0 DK44-1.0M DK60-1.0 DK6 |
1.0mm High Density FLEX (300V, 105隆?C)
1.0mm High Density FLEX (300V, 105掳C)
1.0mm High Density FLEX (300V, 105°C)
|
Yamaichi Electronics Co., Ltd.
http://
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| ISPLSI1032 ISPLSI1032-60LG_883 ISPLSI1032-80LJ ISP |
In-System Programmable High Density PLD EE PLD, 17 ns, PQCC84
High-Density Programmable Logic
|
Lattice Semiconductor, Corp.
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
|
