| PART |
Description |
Maker |
| HY5PS1G831CFP-Y5 HY5PS1G831CLFP-Y5 HY5PS1G1631CFP- |
1Gb DDR2 SDRAM 1G DDR2内存
1Gb DDR2 SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| WV3EG264M64EFSU335D4-MG |
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲，瓦特/锁相
|
Supertex, Inc.
|
| TS1GJF2A |
1GB USB2.0 JetFlash垄莽2A
1GB USB2.0 JetFlash?2A
|
Transcend Information. Inc.
Transcend Information. ...
|
| DOM40KV032 HFDOM40KB016 HFDOM40KVXXX |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co., Ltd.
|
| HYS64D128320HU-6-B HYS64D128320HU-5-B HYS72D128320 |
DDR SDRAM Modules - 1GB (128Mx64) PC2700 2-bank
DDR SDRAM Modules - 1GB (128Mx64) PC3200 2-bank
DDR SDRAM Modules - 1GB (128Mx72) PC3200 2-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2700 2-bank
|
Infineon
|
| S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW |
32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
|
SPANSION LLC
Spansion, Inc.
|
| H26M11001BAR |
1GB e-NAND
|
Hynix
|
| HY5PS1G831CFR HY5PS1G1631CFP HY5PS1G1631CFR HY5PS1 |
1Gb DDR2 SDRAM
|
Hynix Semiconductor
|
| KFG1G16Q2C |
1Gb OneNAND C-die
|
Samsung Electronics
|
| HY5PS1G831AFP HY5PS1G831AFP-C4 HY5PS1G831ALFP HY5P |
1Gb DDR2 SDRAM
|
Hynix Semiconductor
|
| TS1GJF110 |
1GB USB2.0 JetFlash??10
|
Transcend Information. Inc.
|
