| PART |
Description |
Maker |
| K4T1G084QC |
(K4T1G044QC / K4T1G084QC) 1Gb C-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| DOM40KV032 HFDOM40KB016 HFDOM40KVXXX |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co., Ltd.
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| H26M11001BAR |
1GB e-NAND
|
Hynix
|
| EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存（128M的话x72位，2个等级）
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HY5PS1G831CFR HY5PS1G1631CFP HY5PS1G1631CFR HY5PS1 |
1Gb DDR2 SDRAM
|
Hynix Semiconductor
|
| HY5PS1G431F-Y5 HY5PS1G831F-Y5 HY5PS1G431F-Y6 HY5PS |
DDR2 SDRAM - 1Gb
|
Hynix Semiconductor
|
| TS1GJFV60 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| H5TQ1G63DFR-12C H5TQ1G63DFR-N0C H5TQ1G63DFR-11C |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| H5TQ1G63DFRG7J H5TQ1G63DFRG7L H5TQ1G63DFRH9I H5TQ1 |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| TS1GJF130 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
