| PART |
Description |
Maker |
| IDT70V9379L IDT70V9379L9PRF IDT70V9379L12PRF IDT70 |
32K x 18 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
|
IDT[Integrated Device Technology]
|
| CY7C1219F-133AC CY7C1219F |
1-Mb (32K x 36) Pipelined DCD Sync SRAM
1-Mbit (32K x 36) Pipelined DCD Sync SRAM
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1215H CY7C1215H-100AXC CY7C1215H-100AXI CY7C12 |
1-Mbit (32K x 32) Pipelined Sync SRAM
|
Cypress Semiconductor
|
| IS61C632A-6PQ IS61C632A-7TQ IS61C632A-6TQI |
32K X 32 Synchronous Pipelined Static RAM
|
天津新技术产业园区管理委员会
ISSI
|
| W25P010A W25P010AS |
From old datasheet system
32k x 32 burst pipelined SRAM
|
Winbond
|
| MT58L32L32D MT58L32L36D MT58L64L18D |
32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器) 32KX82,3.3 O的流水线，双氰胺SyncBurst的SRAM兆，3.3V的输输出，流水线式，双循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
Micrel Semiconductor, Inc.
|
| BT138F BT138F-500 BT138F-500F BT138F-500G BT138F-6 |
DIODE ZENER TRIPLE ISOLATED 200mW 9.1Vz 20mA-Izt 0.02592 0.1uA-Ir 7 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 18Vz 0.05mA-Izt 0.05 0.05uA-Ir 13.6 SOT-363 3K/REEL
DIODE ZENER TRIPLE BI-DIRECTIONAL 200mW 24Vz 0.05mA-Izt 0.05 0.05uA-Ir 18.2 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 27Vz 0.05mA-Izt 0.05 0.05uA-Ir 20.4 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 22Vz 0.05mA-Izt 0.05 0.05uA-Ir 16.7 SOT-363 3K/REEL
Octal Bus Transceivers with 3-State Outputs 20-LCCC -55 to 125
Triacs
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IDT709379L IDT709379L9PF IDT709379L7PF IDT709379L1 |
x18 Dual-Port SRAM
HIGH-SPEED 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
|
IDT
|
| CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
| AT28HC256F-12UM_883 AT28HC256F-90FM_883 AT28HC256E |
256 (32K x 8) High-speed Parallel EEPROM
32K X 8 EEPROM 5V, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
70NS, TSOP, IND TEMP(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PDSO28
70NS, PLCC, IND TEMP, GREEN PKG(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PQCC32
90NS, PDIP, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 90 ns, PDIP28
120NS, SOIC, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 120 ns, PDSO28
|
ATMEL Corporation
Atmel, Corp.
ATM Electronic, Corp.
|
| IS61LV3216L-12K IS61LV3216L-12T IS61LV3216L-12KI I |
32K x 17 Low Voltage High-Speed CMOS Static RAM(3.3V,32K x 16 低压高速CMOS静态RAM)
32K x 16 LOW VOLTAGE CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
|
|
