| PART |
Description |
Maker |
| HV7802 HV7802MG-G |
High Side Current Monitor 8V to 450V, Confi gurable Output
|
Supertex, Inc
|
| LTC6410-6 LTC6410CUD-6-PBF LTC6410CUD-6-TRPBF LTC6 |
Low Distortion, Low Noise Differential IF Amplifier with Confi gurable Input Impedance
Low Distortion, Low Noise Differential IF Amplifi er with Confi gurable Input Impedance
|
Linear Technology
|
| LTC2932 LTC2932CF-TRPBF LTC2932F-PBF LTC2932HF-TRP |
Confi gurable Six Supply Monitor with Adjustable Reset Timer and Supply Tolerance
|
Linear Technology
|
| BUK212-50Y BUK212_217_50Y-01 BUK217-50Y |
BUK212-50Y; BUK217-50Y; Single channel high-side TOPFET(tm)
Single channel high-side TOPFET⑩
From old datasheet system
Single channel high-side TOPFET TM
Single channel high-side TOPFET垄芒
Single channel high-side TOPFET?/a>
25 A BUF OR INV BASED PRPHL DRVR, PSSO4
Single channel high-side TOPFET??/span>
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| MG100J6ES50 E002053 |
Silicon N-Channel IGBT for High Power Switching and Motor Control Application(用于大功率转换和电机控制的硅 N沟道绝缘栅双极型晶体 硅N沟道IGBT的大功率开关和电机控制中的应用（用于大功率转换和电机控制的沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Semiconductor
|
| HCPL0500 HCPL0501 HCPL0530 HCPL0531 HCPL0534 HCPL0 |
Single channel high speed transistor optocoupler.
HIGH SPEED TRANSISTOR OPTOCOUPLERS
8-Pin SOIC Single-Channel High Speed Transistor 8-PIN, Output Optocoupler - No Base Connection
8-Pin SOIC Single-Channel High Speed Transistor Output Optocoupler
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 1kV/us
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us
8-Pin SOIC 1 Mbit/s Single-Channel High Speed Transistor Output Optocoupler
|
FAIRCHILD[Fairchild Semiconductor]
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| SG2644 SG2644DW SG2644J SG2644M SG2644R SG2644T SG |
Half Bridge Driver, Non-Inverting
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, MBFM9
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP14
DUAL HIGH SPEED DRIVER 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP8
EXTRACTION TOOL 566 SERIES
From old datasheet system
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MG300J2YS50 E002237 |
TOSHIBA GTR MODULE SILICON N CHANNEL 1GBT
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
|
Toshiba Semiconductor
|
