| PART |
Description |
Maker |
| EP10QY03 |
SBD JEDEC SOD 0.8 A, 30 V, SILICON, SIGNAL DIODE
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| V53C1664H |
High Performance Fast Page Mode Dual Cas CMOS Dynamic RAM
HIGH PERFORMANCE 64K X 16 BIT FAST PAGE MODE DUAL CAS CMOS DYNAMIC RAM
|
Mosel-Vitelic
MOSEL[Mosel Vitelic, Corp]
|
| KMM5364005BSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5361205C2WG KMM5361205C2W |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KMM5361203C2W |
1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
|
Samsung Semiconductor
|
| KM44C1005D |
1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOSCAS 动态RAM(带扩展数据输)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 2N1842A |
JEDEC TO-48
|
New Jersey Semi-Conductor Products, Inc.
|
| 1N87 AAY32 1N695A AAY42 |
JEDEC DO-7 PACKAGE
|
Jedec
|
| EM47EM0888SBA-125E EM47EM0888SBA-150 EM47EM0888SBA |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
