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80KSBR200 - sRIO SERIAL BUFFER FLOW-CONTROL DEVICE

80KSBR200_2054781.PDF Datasheet


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80KSBR200 sRIO SERIAL BUFFER FLOW-CONTROL DEVICE
Integrated Device Technology
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Jingjing Microelectroni...
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128K x 32 Flow Through SyncBurst SRAM
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
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From old datasheet system
8Mb SyncBurst Flow through SRAM
ICSI[Integrated Circuit Solution Inc]
17572 17572-G HTSNK. B X-FLOW. .9H LOW FLOW. THRU HOLE HTSNKB型X流0.9 低流量。通孔
Vicor, Corp.
VICOR[Vicor Corporation]
17570 17570-5 HTSNK. A X-FLOW. .911 LOW FLOW. THRU HOLE
VICOR[Vicor Corporation]
MC74LCX54105 MC74LCX541DTR2 MC74LCX541MEL MC74LCX5 Low-Voltage CMOS Octal Buffer Flow Through Pinout With 5 V−Tolerant Inputs and Outputs (3−State, Non−Inverting)
ONSEMI[ON Semiconductor]
CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
15985 15985-8 HTSNK, B X-FLOW. .911 LOW FLOW. THREADED HTSNK,B型X流0.911低流量。螺
HTSNK B X-FLOW. .911 LOW FLOW. THREADED
Vicor, Corp.
VICOR[Vicor Corporation]
IDT71V2577S75PF IDT71V2577S75PFI IDT71V2577YS75PF 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect
3.3V 256K x 18 Synchronous Flow-Through SRAM w/2.5V I/O
IDT[Integrated Device Technology]
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
Cypress Semiconductor Corp.
AT45DB011B 1M bit, 2.7-Volt Only Serial-Interface Flash with One 264-Byte SRAM Buffer
Atmel
 
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