| PART |
Description |
Maker |
| NE3511S02 NE3511S02-T1C NE3511S02-A NE3511S02-T1D |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
celduc-relais
|
| HLMP-K105 HLMP-D105A HLMP-D101 HLMP-D101A HLMP-K10 |
DOUBLE HETEROJUNCTION AIGaAs HIGH INTENSITY RED LED LAMPS T-1 SINGLE COLOR LED, RED, 3 mm
DOUBLE HETEROJUNCTION AIGaAs HIGH INTENSITY RED LED LAMPS Red Clear with Standoff
DOUBLE HETEROJUNCTION AIGaAs HIGH INTENSITY RED LED LAMPS Red Diffused
T-1 Double Heterojunction AlGaAs Low Current Red LED Lamp
T-1 Double Heterojunction AlGaAs High Intensity Red LED Lamp
T-1 3/4 Double Heterojunction AlGaAs Low Current Red LED Lamp
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| TSFF5210-09 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSFF541009 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHF5410 TSHF541009 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
http://
Vishay Siliconix
|
| TSHG640009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHG6200 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSHG5510 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHF5210 TSHF521009 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
http://
|
| VSMB3940X01-GS08 VSMB3940X01-GS18 |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| NE350184C NE350184C-T1 NE350184C-T1A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| VSMF4710-GS08 VSMF4710-GS18 VSMF4710 |
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
