| PART |
Description |
Maker |
| FMM60-02TF |
Trench Gate HiperFET N-Channel Power MOSFET
|
IXYS Corporation
|
| IXFV110N25T IXFV110N25TS |
Trench Gate Power HiperFET
|
IXYS Corporation
|
| CM75TU-12F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| IXFK420N10T IXFX420N10T |
GigaMOS Trench HiperFET Power MOSFET
|
IXYS Corporation
|
| FDMC86340 |
N-Channel Shielded Gate Power Trench MOSFET 80 V, 48 A, 6.5 mΩ
|
Fairchild Semiconductor
|
| CM100TJ-24F |
128 x 64 pixel format, LED or EL Backlight available
Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| FDD3672 FDD3672NL |
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| IXFH80N20Q IXFK80N20Q IXFT80N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
| FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
