| PART |
Description |
Maker |
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| MRF160 |
POWE FIELD EFFECT TRANSISTOR
|
Advanced Semiconductor
|
| QM50TX-H |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM20TG-9B |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM20DX-H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM100HY-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM30E3Y-H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM50E3Y-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM30DY-HB |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM30TPM-H02 RM30TB-M RM30TPM-H |
Rectifier Diodes, 800V
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SD1055 2SD1766 D1758 2SD1758 2SD1919 2SD1862 A580 |
Medium Power Transistor (32V, 2A)
2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Medium Power Transistor 32V/ 2A
Medium Power Transistor 32V, 2A
Medium Power Transistor 32V 2A
From old datasheet system
|
ROHM[Rohm]
Rohm CO.,LTD.
|
