| PART |
Description |
Maker |
| 4GBL01 4GBL02 4GBL04 4GBL06 4GBL08 |
100V Bridge in a GBL package
200V Bridge in a GBL package
400V Bridge in a GBL package
600V Bridge in a GBL package
800V Bridge in a GBL package
|
International Rectifier
|
| 6GBU005 6GBU01 6GBU02 6GBU04 6GBU06 6GBU08 |
50V Bridge in a GBU package
100V Bridge in a GBU package
200V Bridge in a GBU package
400V Bridge in a GBU package
600V Bridge in a GBU package
800V Bridge in a GBU package
|
International Rectifier
|
| IR25XB02H IR25XB04H IR25XB06H IR25XB08H |
25.0 Amps Single Phase Full Wave 二十五点?安培单相全
600V Bridge in a IR25XB package
200V Bridge in a IR25XB package
800V Bridge in a IR25XB package
400V Bridge in a IR25XB package
|
International Rectifier, Corp.
|
| CAT24FC65GLI-TE13 CAT24FC66ZD2I-TE13 CAT24FC65 CAT |
LM5105 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: LLP; No of Pins: 10
LM5104 High Voltage Half-Bridge Gate Driver with Adaptive Delay; Package: LLP; No of Pins: 10
Silver Mica Capacitor; Capacitance:1300pF; Capacitance Tolerance: /- 5%; Series:CD16; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.94mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY 连接器附
64K-Bit I2C Serial CMOS EEPROM with Partial Array Write Protection 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
LM5106 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: LLP; No of Pins: 10 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:5; Connector Shell Size:14S; Connecting Termination:Solder; Body Style:Straight; Circular Contact Gender:Socket; Gender:Female 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
LM5107 100V / 1.4A Peak Half Bridge Gate Driver; Package: SOIC NARROW; No of Pins: 8 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
LM5106 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: MINI SOIC; No of Pins: 10 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
WASHER & NUT KIT for PDB181 MODEL 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
|
http://
CATALYST[Catalyst Semiconductor]
Vishay Intertechnology, Inc.
BCD Semiconductor Manufacturing, Ltd.
NXP Semiconductors N.V.
Motorola Mobility Holdings, Inc.
Cooper Bussmann, Inc.
Microchip Technology, Inc.
|
| HIP2106 HIP2106IB HIP2106IP |
100V/1A Peak/ Low Cost/ High Frequency Half Bridge Driver
100V/1A Peak Low Cost High Frequency Half Bridge Driver
100V/1A Peak, Low Cost, High Frequency Half Bridge Driver CONTROL(100V/1A 峰低成高频半桥驱动控制) 100V/1A山顶，低成本，高频率的一半桥驱动器控制（100V/1A峰值，低成本，高频半桥驱动控制
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HIP2100IBZT HIP2100IRZ HIP2100EIBZ HIP2100IBT HIP2 |
100V/2A Peak High-Frequency Half Bridge Driver with CMOS Logic Inputs; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R 2 A HALF BRDG BASED MOSFET DRIVER, PDSO8
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver 2 A HALF BRDG BASED MOSFET DRIVER, PQCC16
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver 2 A HALF BRDG BASED MOSFET DRIVER, PDSO8
Drives N-Channel MOSFET Half Bridge
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
|
Intersil, Corp.
Intersil Corporation
|
| HIP2100EIB HIP2100EIBZ HIP2100IBZ HIP2100IR HIP210 |
100V/2A Peak High-Frequency Half Bridge Driver with CMOS Logic Inputs; Temperature Range: -40°C to 85°C; Package: 12-DFN T&R 2 A HALF BRDG BASED MOSFET DRIVER, DSO12
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| ISL89400ABZ ISL89401ABZ ISL89401AR3Z-T |
100V, 1.25A Peak, High Frequency Half-Bridge Drivers
100V, 1.25A Peak, High Frequency Half-Bridge Drivers; Temperature Range: Full-Range Ind; Package: 9-DFN T&R
|
Intersil Corporation
|
| 70MT100KB 70MT80KB 60MT100KB 60MT120KB 60MT140KB 6 |
ER 3C 3#12 PIN PLUG CRIMP
CONNECTOR ACCESSORY
THREE PHASE BRIDGE
800V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
|
IRF[International Rectifier]
|
| IRHG563110 IRHG567110 IRHG563110P IRHG567110P IRHG |
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
|
IRF[International Rectifier]
|
| HIP2101IB HIP2101IBZ HIP2101IRZ HIP2101IR4 HIP2101 |
100V/2A Peak/ Low Cost/ High Frequency Half Bridge Driver
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
100V/2A Peak Low Cost High Frequency Half Bridge Driver
Driver, Half Bridge, 100V/2A Peak, TTL Inputs, High Frequency, Drives N-Channel
|
INTERSIL[Intersil Corporation]
|
| AM29F200BB-45EC AM29F200BB-120FC AM29F200BB-70FC A |
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ44VZL with Lead-Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU1010Z with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRL2910 in lead free packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3705N with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF3205L with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR2307Z with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU7807ZCPBF with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF530NS with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU1205 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF530NS with Lead Free Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB61N15D with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF2805S with Lead-Free packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFSL33N15D with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU3717 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7463 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU2705 with Lead Free Packaging
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7457 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a 7-Lead TO-262 package; Similar to IRF1405ZL-7P with Lead Free packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF540NL with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR7811WCPBF with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFS23N20D with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7834 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR4105Z with Lead Free Packaging
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU3714 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2Pak package; Similar to IRF8010S with Lead-Free packaging.
100V Single N-Channel Automotive HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3710Z with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF3205PBF with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF3710Z with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFSL17N20D with Lead Free Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFSL23N15D with Lead Free Packaging
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Advanced Micro Devices, Inc.
|
