PART |
Description |
Maker |
MJE34003 MJE350 MJE340 |
COMPLEMETARY SILICON POWER TRANSISTORS
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STMICROELECTRONICS[STMicroelectronics]
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2N6034 2N6035 2N6037 2N6038 2N6039 2N6036 |
MIDIUM POWER DAR;OMGTONS
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意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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TIP142 TIP147 TIP146 TIP145 TIP141 TIP140 4132 |
Complemetary Silicon Power Darlington Transistors(浜?ˉ纭????揪??】?朵?绠? From old datasheet system COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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STMicro
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1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns) (1N2xxx) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB (1N4525 - 1N4529) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER
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MICROSEMI[Microsemi Corporation] Microsemi, Corp.
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1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V,稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电2V的,稳定电流一十一点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V,稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定(稳定电压均.9V,稳定电流六十四毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V,稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V,稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.1V,稳定电8毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压,稳定电流21毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V,稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电5V的,稳定电流三点三毫安的硅功率齐纳二极管 Silicon Power Z-Diodes 硅功率Z -二极 Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V,稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电3V的,稳定电流十九毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V,稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电0V的,稳定电流十二点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.2V,稳定电流三一毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.2V,稳定电1毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V,稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.6V的稳定电9毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V,稳定电3mA的硅功率齐纳二极 Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V,稳定电9mA的硅功率齐纳二极 From old datasheet system Silicon Power Z?Diodes
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Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken]
|
BUX85_D ON0262 BUX85 |
SITCHMODE NPN Silicon Power Transistors From old datasheet system 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS
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ON Semiconductor Motorola, Inc
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BYP54-800 BYP53 BYP53-100 BYP53-150 BYP53-200 BYP5 |
25A Silicon Power Rectifier Diode 25 A, 800 V, SILICON, RECTIFIER DIODE 25A Silicon Power Rectifier Diode 25 A, 500 V, SILICON, RECTIFIER DIODE 25A Silicon Power Rectifier Diode 25 A, 75 V, SILICON, RECTIFIER DIODE 25A Silicon Power Rectifier Diode 25 A, 150 V, SILICON, RECTIFIER DIODE 25 A, 75 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN 25 A, 150 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN 25 A, 700 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN 25 A, 200 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN 25 A, 400 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
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ZETEX PLC Zetex Semiconductor PLC ZETEX[Zetex Semiconductors] Diodes, Inc.
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NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS SILICON POWER MOS FET
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California Eastern Labs
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NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 Silicon Power Rectifier Diode / 12 Amp Silicon Power Rectifier Diode 12 Amp Silicon Power Rectifier Diode, 12 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
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NTE[NTE Electronics]
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BUV21 BUV21_D ON0257 |
From old datasheet system 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS SITCHMODE Series NPN Silicon Power Transistor
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Motorola, Inc. ON Semiconductor
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