| PART |
Description |
Maker |
| ML725AA11F ML725B11F ML725J11F ML720L11S ML720AA11 |
1310 nm, LASER DIODE
MITSUBISHI LASER DIODES InGaAsP DFB LASER DIODES 三菱激光二极管InGaAsP的DFB激光器
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| SPLBG98 SPLBW81 SPLBS94 SPLBX83 SPLBX98 SPLBX94 SP |
Unmounted Laser Bar 40 W, 980 nm
Unmounted Laser Bar 20 W, 808 nm
Unmounted Laser Bar 100 W, qcw
Unmounted Laser Bar 30 W, 830 nm
Unmounted Laser Bar 30 W, 980 nm
Unmounted Laser Bar 30 W, 940 nm
Unmounted Laser Bar 30 W, 808 nm
|
Infineon
|
| VT5376V032 |
Ultra-low power laser motion sensor for laser mouse applications
|
STMicroelectronics
|
| ADL-65052TL |
Laser pointers industrial laser markers / measuring instruments Bar code readers
|
Roithner LaserTechnik GmbH
|
| STL81007G STL81007GE9337 |
FIBER OPTIC LASER DIODE EMITTER, 1510-1590nm, 1000Mbps, PANEL MOUNT, TO-18, FC CONNECTOR
1550 nm Laser, Low Power
|
INFINEON TECHNOLOGIES AG
|
| SPLBXXX Q62702-P1733 Q62702-P3259 Q62702-P1719 SPL |
From old datasheet system
Unmounted Laser Bars 20 W cw ... 100 W qcw 卸载激光酒0 W连续... 100瓦准连续
Unmounted Laser Bars 20 W cw ... 100 W qcw LASER DIODE
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| LT0R45P LT0R45M |
Compacat Size Hologram Laser for DVD (650nm-5m Single Mode)
Red Hologram Laser
|
SHARP[Sharp Electrionic Components]
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
