| PART |
Description |
Maker |
| CGY887B CGY887B_1 CGY887B-2015 |
860 MHz/ 27.8 dB gain push-pull amplifier
From old datasheet system
860 MHz, 27.8 dB gain push-pull amplifier
|
Quanzhou Jinmei Electronic ...
NXP Semiconductors
Philips Semiconductors
|
| BGD904 BGD904MI |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
|
| BGD814 BGD81401 |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
Philips
|
| BGX885N_5 BGX885N01 BGX885N-2015 BGX885N-15 BGX885 |
From old datasheet system
860 MHz, 17 dB gain push-pull amplifier
|
Philips
Quanzhou Jinmei Electro...
http://
|
| CGY887A_5 CGY887A CGY887A-2015 |
From old datasheet system
860 MHz, 25.5 dB gain push-pull amplifier
|
Quanzhou Jinmei Electronic ...
Philips
|
| MHW8182B |
MHW8182B 860 MHz, 19.1 dB Gain, 128-Channel CATV Amplifier Module
|
Motorola
|
| MHW8205 |
MHW8205 860 MHz, 20.2 dB Gain, 128-Channel CATV Amplifier Module
|
Motorola
|
| MHW9182 MHW7182 MHW8182 |
18 dB GAIN 750/860/1000 MHz 110/128/152 CHANNEL CATV AMPLIFIERS
|
MOTOROLA[Motorola, Inc]
|
| PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦，860-960兆赫GOLDMOS场效应晶体管
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| BGD802 |
Hybrid amplifier module operating at a supply voltage of 24 V (DC). BGD802<SOT115J|<<<1<Always Pb-free,;BGD802/02<SOT115J|<<<1<Always Pb-free,;
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
