| PART |
Description |
Maker |
| 2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH SWITCHING
P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
| RJK03M1DPA-00-J5A RJK03M1DPA-15 |
30V, 50A, 2.3mΩmax.N Channel Power MOS FET
30V, 50A, 2.3mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FDS8858CZ |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
|
Fairchild Semiconductor
|
| 2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| MSC0311WE |
30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| 2SK2731 A5800299 |
Transistors > MOS FET > Small Signal MOS FET
From old datasheet system
Interface and switching (30V, 200mA)
Interface and switching (30V/ 200mA)
|
ROHM[Rohm]
|
| RJK0301DPB-02-15 |
30V, 60A, 2.8mΩ max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FDMS8670AS08 FDMS8670AS |
N-Channel PowerTrench垄莽 SyncFET TM 30V, 42A, 3.0m楼?
N-Channel PowerTrench庐 SyncFET TM 30V, 42A, 3.0m惟
N-Channel PowerTrench? SyncFET TM 30V, 42A, 3.0mΩ
|
Fairchild Semiconductor
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N2DPA |
30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
