| PART |
Description |
Maker |
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| SUM40N02-12P |
N-Channel 20-V (D-S) 175C MOSFET N沟道20 - V（下局副局长）175C MOSFET
|
Vishay Intertechnology, Inc.
|
| SUD50N03-06P |
N-Channel 30-V (D-S) 175C MOSFET N沟道30 V的（副）175C MOSFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| APT5020BVFR |
POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| 2SJ56709 2SJ567 2SJ5672-7J1B |
2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
|
Toshiba Semiconductor
|
| 2SK3211 2SK3211L-E 2SK3211STL-E |
25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK2006DPE-TL-E RJK2006DPF RJK2006DPJ |
Silicon N Channel MOS FET High Speed Power Switching
40 A, 200 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET LDPAK-3
|
Renesas Electronics Corporation
Glenair, Inc.
|
| RJK2006DPE-TL-E RJK2006DPJ10 RJK2006DPJ-15 |
40 A, 200 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET LDPAK-3
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| SUM110N03-04P |
N-Channel 30-V (D-S) 175C MOSFET
|
Vishay
|
| SUP85N04-03 SUB85N04-03 |
N-Channel 40-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
