| PART |
Description |
Maker |
| BUT11 BUT11A |
Silicon Diffused Power Transistor(硅扩散功率型晶体
Silicon diffused power transistors
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 6F80 12F 12F10 12F100 12F100B 12F10B 12F120 12F120 |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls
6,12 and 16 Amp Diffused Silicon Rectifier Diodes
|
IRF[International Rectifier]
|
| BDY28 185T2 183T2 BDY27 184T2 BDY26 185T2C |
250V NPN silicon transistot, diffused mesa
200V NPN silicon transistot, diffused mesa
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-3 晶体管|晶体管|叩| 250V五（巴西）总裁| 6A条一（c）|3
NPN SILICON TRANSISTORS DIFFUSED MESA
180V NPN silicon transistot, diffused mesa
|
Cypress Semiconductor, Corp.
List of Unclassifed Manufacturers
ETC[ETC]
Comset Semiconductors
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|
| 2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba Semiconductor
Fujitsu Limited
Fujitsu, Ltd.
|
| BU4523DW |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BU2708AF |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BU506DF BU506F |
Silicon diffused power transistors
|
PHILIPS[Philips Semiconductors]
|
| BUJ103 BUJ103A |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHE13007 BU2722AF |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUT11AI |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
