| PART |
Description |
Maker |
| HN29W12811T-60 |
128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
|
Hitachi,Ltd.
|
| S29GL01GP90FFI012 S29GL01GP90FFIR12 S29GL128P11FFI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 90 ns, PDSO56
|
Spansion, Inc.
SPANSION LLC
|
| K9T1G08U0M |
128M x 8 Bits NAND Flash Memory
|
http://
|
| MX25L12835E MX25L12835EMI-10G MX25L12835EZNI-10G |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
HIGH PERFORMANCE SERIAL FLASH SPECIFICATION
|
Macronix International
|
| AT49SN12804 |
128M bit, 1.8-Volt Page Mode Flash Memory.
|
Atmel
|
| W29GL128CH9B W29GL128CL9B W29GL128CH9T |
128M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| MX25L12845EZNI10G MX25L12845E14 MX25L12845EMI10G |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX29LA129MLTI-90R MX29GL033MBMC-10G MX29GL033MBMC- |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| M5M29KB_T331AVP M5M29KB M5M29KB/T331AVP M5M29KB331 |
Memory>NOR type Flash Memory
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Renesas Electronics Corporation.
|
| MX28F128J3 MX28F640J3 |
(MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
|
Macronix International
|
| MX25L12875FMI10G MX25L12875FMI-10G MX25L12875FM2I- |
3V 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
DATASHEET
|
Macronix International
|
| K9F1G08D0M K9F1G16D0M K9F1G08U0M-YCB00 |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
128M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
