PART |
Description |
Maker |
FLM1414-3F |
Internally Matched Power GaAs FET
|
Eudyna Devices Inc
|
FLM5964-18DA |
Internally Matched Power GaAs FETs
|
Fujitsu
|
MGFC36V6472A11 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
FLM1414-4F |
Internally Matched Power GaAs FET 内部匹配砷化镓场效应
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Sumitomo Electric Industries, Ltd.
|
MGFC38V586711 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFC40V5964 MGFC40V596411 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFK38A3745 MGFK38A374511 |
X/Ku band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFC39V3436 MGFC39V343611 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFC40V3742 MGFC40V374211 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET 12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|