| PART |
Description |
Maker |
| AB28F200BR-T80 A28F200BR-TB A28F200BR-B AB28F200BR |
2-MBIT (128K X 16. 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
JT 42C 42#22 PIN RECP
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K X 16/ 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corp.
|
| IS28F400BVT-80TI IS28F400BLV IS28F400BV IS28F400BV |
262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS28F200BVB-120TI IS28F200BVT-120TI IS28F200BVB-80 |
CRYSTAL 9.8304MHZ 20PF HC-49/UA
G1 802.15.4 2.4GHZ 256K X 8 FLASH 5V PROM, 60 ns, PDSO48
SIP 802.15.4 2.4GHZ 16KB 256K X 8 FLASH 5V PROM, 80 ns, PDSO48
131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY 256K X 8 FLASH 5V PROM, 60 ns, PDSO48
131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY 131,072 x二百六十二分之十六，144 × 8 SmartVoltage引导块闪
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system
Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M5V208FP-10L M5M5V208FP-10LL M5M5V208FP-12L M5M5 |
From old datasheet system
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M5256CP-10LL M5M5256CP-10XL M5M5256CP-85LL M5M52 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word8位）的CMOS静态RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
262144-bit (32768 x 8-bit) CMOS static RAM, 85ns
262144-bit (32768 x 8-bit) CMOS static RAM, 100ns
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| HN27C4000G-10 HN27C4000G HN27C4000G-15 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288词？8-Bit/262144-Word x 16位的CMOS紫外线可擦除只读存储
524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| LH28F016SCH-L LH28F016SC-L |
16 M-bit (2 MB x 8) SmartVoltage Flash Memories
|
SHARP[Sharp Electrionic Components]
|
| LH28F800SG LH28F800SG-L |
8 M-bit (512 kB x 16) SmartVoltage Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| LH28F800SGH-L LH28F800SG-L LH28F800SGN-L70 LH28F80 |
8 M-bit (512 kB x 16) SmartVoltage Flash Memories
|
SHARP[Sharp Electrionic Components]
|
| LH28F160SGED-L10 |
16 M-bit (512 kB x 16 x 2-Bank) SmartVoltage Dual Work Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| LH28F160SGED-L10 |
16 M-bit (512 kB x 16 x 2-Bank) SmartVoltage Dual Work Flash Memory
|
Sharp Corporation
|
