| PART |
Description |
Maker |
| P20P-T |
LOW-POWER, LOW-NOISE, REGULATED HIGH-VOLTAGE SUPPLY
|
XP Power Limited
|
| GN01096B |
GaAs device - GaAs MMICs - For Low noise Amplifier
|
Matsshita / Panasonic
|
| CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC
MIMIX[Mimix Broadband]
|
| LTC3204 LTC3204-3.3 LTC3204-5 LTC3204B-3.3 LTC3204 |
Low Noise Regulated Charge Pump in 2 X 2 DFN
|
Linear Technology
|
| MCP1252T-ADJI/MS MCP125233X50E/MS MCP125233X50I/MS |
Low-Noise, Positive-Regulated Charge Pump
|
Microchip Technology
|
| L5200L-50-AH6-R L5200-15 L5200L-45-AG6-R |
LOW NOISE, REGULATED CHARGE PUMP DC/DC CONVERTERS
|
Unisonic Technologies
|
| MAX840 MAX843 MAX844 |
Low-Noise, Regulated, -2V GaAsFET Bias(低噪,已调整的,-2V砷化镓场效应管偏置电
|
Maxim Integrated Products, Inc.
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| MGF4963BL |
Low Noise GaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| MGF1303B |
Low Noise GaAs FET
|
Mitsubishi Electric Corporation
|
| MGF4953B11 |
Low Noise GaAs HEMT
|
Mitsubishi Electric Semiconductor
|
