PART |
Description |
Maker |
K7P801811M K7P803611M |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825 |
512Kx36 & 1Mx18 Pipelined NtRAM 256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes 256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
|
http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7P803611M-H21 K7P801811M K7P801811M-H20 K7P801811 |
256Kx36 & 512Kx18 SRAM
|
SAMSUNG[Samsung semiconductor]
|
K7M801825B K7M803625B06 |
256Kx36 & 512Kx18 Flow-Through NtRAM
|
Samsung semiconductor
|
K7N801801M |
256Kx36 & 512Kx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
K7N803601B K7N801801B K7N803601B-PI160 K7N801801B- |
256Kx36 & 512Kx18 Pipelined NtRAM 256K X 36 ZBT SRAM, 3.5 ns, PQFP100 512K X 18 ZBT SRAM, 3.5 ns, PQFP100
|
Samsung semiconductor
|
HIP5015 HIP5015IS HIP5015IS1 HIP5016 HIP5016IS HIP |
7V, 7A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge 7V/ 7A SynchroFET Complementary Drive Synchronous Half-Bridge 7V, 7A SynchroFET Complementary Drive Synchronous Half-Bridge From old datasheet system 7V, 7A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器(同步半桥驱动器) 7V, 7A SynchroFETComplementary Drive Synchronous Half-Bridge 7 A HB BASED PRPHL DRVR WITH PWM, PSFM7
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
HIP5010 HIP5010IS HIP5010IS1 HIP5011 HIP5011IS HIP |
7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN HB BASED PRPHL DRVR WITH PWM, PSSO7 Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器(同步半桥驱动器) 7V, 17A SynchroFETComplementary Drive Synchronous Half-Bridge 7V, 17A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge From old datasheet system 7V, 17A SynchroFET?Complementary Drive Synchronous Half-Bridge 7V, 17A SynchroFET Complementary Drive Synchronous Half-Bridge 7V/ 17A SynchroFET Complementary Drive Synchronous Half-Bridge 7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
IS61S6432 IS61S6432-7TQ IS61S6432-6PQ IS61S6432-6P |
From old datasheet system 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
IC61S6432-8TQI IC61S6432 IC61S6432-117PQ IC61S6432 |
100MHz; 3.3V; 64K x 32 synchronous pipelined static RAM SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM From old datasheet system 200MHz; 3.3V; 64K x 32 synchronous pipelined static RAM 75MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
|
ICSI[Integrated Circuit Solution Inc]
|