| PART |
Description |
Maker |
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| PE4230 PE4230-EK 4230-52 4230 4230-00 4230-21 4230 |
SPDT High Power UltraCMOSRF Switch
SPDT High Power UltraCMOS RF Switch
SPDT High Power UltraCMOS⑩ RF Switch
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| TPD03-05G18BS |
5-18GHz 3-Way Power Divider
|
Transcom, Inc.
|
| PDW06407 |
2-18GHz 2-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
| PDW06011 |
6-18GHz 2-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| AS179-000 |
GaAs SPDT Switch 300 kHz-3 GHz Medium Power
PHEMT GaAs IC High Linearity 3 V T/R SPDT Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
