| PART |
Description |
Maker |
| MCM40256 MCM40256S10 MCM40256S70 MCM40256S80 MCM40 |
256K x 40 Bit Dynamic Random Access Memory Module 256K X 40 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器
High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http://
SIEMENS A G
SIEMENS AG
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| AK49256S AK49256S09 |
Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK5322048BW-09 |
Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CO...
|
| HYB5117800BSJ-60 HYB5117800BSJ-50 HYB5117800-60 HY |
2M x 8 Bit 2k 5 V 60 ns FPM DRAM
2M x 8 Bit 2k 3.3 V 60 ns FPM DRAM
2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM
2M x 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode)
2M x 8-Bit Dynamic RAM
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HM5118160B HM5118160BJ-6 HM5118160BJ-7 HM5118160BJ |
1048576-word x 16-bit Dynamic Random Access Memory
|
Hitachi Semiconductor
|
| MCM32256 MCM32256S10 MCM32256S70 MCM32256S80 MCM32 |
256K x 32 Bit Dynamic Random Access Memory Module
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| AK481024 AK581024AG AK581024AS |
1,048,576 x 8 bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| HM514800CLJ-6 HM514800CLJ-7 HM514800CLJ-8 HM514800 |
524,288-word X 8-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|
| AK5321024BW AK5321024BZ |
1,048,576 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
