| PART |
Description |
Maker |
| M28F420 |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4Mb闪速存储器)
|
意法半导
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AM29F400BT-70EF |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Spansion, Inc.
|
| MPC2105A MPC2106ASG66 MPC2105B |
(MPC2105x / MPC2106x) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE TAG SRAM MODULE, 9 ns, DMA178
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KBMB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| FM22L16 FM22L16-55-TG |
4Mbit FRAM Memory
|
ETC
Ramtron International Corporation
|
| F25L004A |
4Mbit (512Kx8) 3V Only Serial Flash Memory
|
Elite Semiconductor Memory Technology Inc.
|
| HYB39S256160T |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| V58C265404S |
HIGH PERFORMANCE 2.5 VOLT 16M X 4 DDR SDRAM 4 BANKS X 4Mbit X 4
|
MOSEL[Mosel Vitelic, Corp]
|
| HMN5128JV HMN5128JV-70 HMN5128JV-85 |
Non-Volatile SRAM MODULE 4Mbit (512K x 8-Bit),34Pin-JLCC, 3.3V
|
Hanbit Electronics Co.,Ltd
|
| ES29LV800DB-90RTG ES29DL400FB-12RTG ES29LV400DB-90 |
4MBIT(512KX 8/256K X 16) CMOS 3.0 VOLT-ONLY, BOOT SECTOR FLASH MEMORY
|
EXCELSEMI[Excel Semiconductor Inc.]
|
| HMD1M4Z1-5 HMD1M4Z1-6 HMD1M4Z1 |
4Mbit(1Mx4bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
|
Hanbit Electronics Co.,Ltd
|
| ES25P40 |
4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
|
优先(苏州)半导体有限公
|
