| PART |
Description |
Maker |
| HN29W12814ATT-50 HN29W12814A |
128M and Type Flash Memory More than 16057 Sector X 2
|
Hitachi
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| S29GL01GP90FFI012 S29GL01GP90FFIR12 S29GL128P11FFI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 90 ns, PDSO56
|
Spansion, Inc.
SPANSION LLC
|
| HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
3.3V Differential Transceiver 8-PDIP -40 to 85
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
COILTRONICS RoHS Compliant: Yes 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HN29V1G91T-30 |
128M X 8-bit AG-AND Flash Memory
|
Renesas Electronics Corporation
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX29LV128DB |
128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
| MX28F128J3XCC-15 MX28F128J3 MX28F128J3RBC-15 MX28F |
128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
|
ETC[ETC]
List of Unclassifed Manufacturers
|
| MX29LV128DBTC-90Q MX29LV128D MX29LV128DBT2I-90Q MX |
128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
| MBM29BS12DH15 MBM29BS12DH15PBT MBM29FS12DH15PBT |
BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT
|
SPANSION[SPANSION]
|
| MX28F128J3 MX28F640J3 |
(MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
|
Macronix International
|
