PART |
Description |
Maker |
IXGA14N120B IXGP14N120B |
IGBT Optimized for switching up to 35 KHz
|
IXYS Corporation
|
IXGN80N60A2 IXGN80N60A2D1 |
Optimized for Switching up to 5 kHz
|
IXYS Corporation
|
IKD04N60RFA |
Optimized Eon, Eoff and Qrr for low switching losses
|
Infineon Technologies A...
|
Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
Q67078-A4402-A2 BUP203 BUP203SMD |
IGBT Transistor From old datasheet system IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 21 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
Q67040S4714 IKP04N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
BUP306D Q67040-A4222-A2 BUP306-D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 23 A, 1200 V, N-CHANNEL IGBT, TO-218 From old datasheet system IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
Q67040S4717 IKW30N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极 From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
SPMQ613-01TXV PM0027A PM0027A-15 |
200 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-7 600V, 200A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc. Solid States Devices, Inc Solid States Devices, I...
|
SPMQ613-02TXV |
400 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-8 600V, 400A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc. Solid States Devices, Inc
|
MG75J2YS50 E002388 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的(不适用沟道绝缘栅双极型晶体管) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
|
Toshiba, Corp. Toshiba Semiconductor
|
MG75J1ZS40 E002382 |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的(不适用沟道绝缘栅双极型晶体管) N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|