| PART |
Description |
Maker |
| SKM50GB100D SKM50GAL100D |
SEMITRANS M Superfast NPT-IGBT Modules SEMITRANS M超高速不扩散条约IGBT模块
|
SEMIKRON[Semikron International]
|
| SKM100GAL163D SKM200GAL123D SKM400GA123D SKM300GA1 |
SEMITRANS IGBT Modules New Range SEMITRANS IGBT模块的新范围
SEMITRANS IGBT Modules New Range 100 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| SKM500GA174D |
SEMITRANS M Low Loss IGBT Modules
|
SEMIKRON[Semikron International]
|
| 2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2SB1589 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| FZT549 |
Power Collector dissipation: PC=2W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
| PC895 PC875 PC865 |
From old datasheet system
High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler
|
SHARP[Sharp Electrionic Components]
|
| 2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| SKM50GAL123D SKM50GB123D |
SEMITRANS M IGBT Modules 50 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
