| PART |
Description |
Maker |
| AM7968-100/B3A AM7968-125LEB AM7968-70/B3A AM7968- |
16MHZ, PLCC, IND TEMP(MCU 5X)
12MHZ, PDIP, COM TEMP(MCU 5X)
24MHZ, PLCC, COM TEMP(MCU 5X)
24MHZ, PLCC, IND TEMP, GREEN, 5V(MCU 5X)
24MHZ, PDIP, IND TEMP(MCU 5X) 发射
|
Advanced Micro Devices, Inc.
|
| 0810-1XX1-27 |
1port.Y/GO LEDs.RJ45 10Base-T
INTEGRATED CONNECTOR MODULES 10Base-T Extended Temp belMag⑩ with LEDs
INTEGRATED CONNECTOR MODULES 10Base-T Extended Temp belMag with LEDs
|
Bel Fuse Inc.
|
| FXA3225BG |
Extended Temp High Reliability Crystal
|
Fox Electronics
|
| SOM-AB5810DC-00A1E SOM-AB5810-15 SOM-AB5810AC-00A1 |
Extended Temp Mini-ITX Application Board
|
Advantech Co., Ltd.
|
| FM25L256 FM25L256-DG FM25L256-G FM25L256-S |
256Kb FRAM Serial 3V Memory - Extended Temp
|
Ramtron International Corporation
|
| P2288-02 P2288-09 |
MCU CMOS 44 LD 33MHZ 2K EPRM, -40C to 85C, 44-PLCC, TUBE
MCU CMOS 44 LD 33MHZ 2K EPRM, 0C to 70C, 44-MQFP, TRAY
MCU CMOS 44 LD LOW PWR, 0C to 70C, 44-TQFP, TRAY
|
Golledge Electronics, Ltd.
|
| PUMA2S16000M-025 PUMA77S16000M-020 PUMA2S16000I-02 |
15NS, 68 PLCC, IND TEMP(EPLD)
SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC
15NS, 68 PLCC, COM TEMP(EPLD)
SRAM|512KX32|CMOS|QFP|68PIN|CERAMIC
20NS, 44 PLCC, IND TEMP(EPLD)
30MHZ, 20 PLCC, IND TEMP, GREEN(FPGA)
15NS, TQFP, COM TEMP, ROHS-A(EPLD)
20NS, 44 TQFP, COM TEMP(EPLD)
7NS, 44 TQFP, COM TEMP, GREEN(EPLD)
30MHZ, 3.3V, 20 PLCC, IND TEMP(FPGA) 静态存储器| 512KX32 |的CMOS |美巡赛| 66PIN |陶瓷
|
Intel, Corp.
|
| HD-6409 HD6409 HD3-6409-9 HD1-6409-9 HD9P6409-9 FN |
Unijunction Transistor; Transistor Polarity:N Channel; Power Dissipation:600mW; Operating Temp. Max:175 C; Operating Temp. Min:-65 C
CMOS Manchester Encoder-Decoder(CMOS Manchester编码译码
From old datasheet system
|
Harris Corporation
INTERSIL[Intersil Corporation]
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
