| PART |
Description |
Maker |
| 102303E 102304E 102301E 102302E |
ENTGRATER 10 BIS 15MM
ENTGRATER 2 BIS 5MM
ENTGRATER 5 BIS 10MM
ENTGRATER 15 BIS 20MM ENTGRATER 15条之0毫米
|
TE Connectivity, Ltd.
|
| 1454016002 1454082002 |
MANOMETER HYDRAULIK 63MM -1 BIS 0BAR 压力表液3MM -1国际清算银行0BAR
MANOMETER HYDRAULIK 63MM 0 BIS 160BAR 压力表液3MM 0结算160BAR
|
Molex, Inc.
Panasonic, Corp.
|
| 5962-9062002MZX 5962-9062007MXX 5962-9062001MZX 59 |
Multi-Range (±10V, ±5V, 10V, 5V), Single 5V, 12-Bit DAS with 8 4 Bus Interface
High-Efficiency, Quad Output, Main Power-Supply Controllers for Notebook Computers
Integrated Temperature Controllers for Peltier Modules
Multi-Range (±10V, ±5V, 10V, 5V), Single 5V, 12-Bit DAS with 8 4 Bus Interface x8双端口SRAM
x8 Dual-Port SRAM x8双端口SRAM
|
OKI SEMICONDUCTOR CO., LTD.
|
| CMX868 CMX868P4 CMX868E2 CMX868D2 |
Low power V.22 bis modem.
|
CONSUMER MICROCIRCUITS LIMITED
|
| REF01CJ REF01CS REF01AJ REF01AZ REF01HJ REF01HP RE |
10V Precision Viltage Reference
10V Precision Voltage Reference
DL CENTER MTG POL POST 4 POST
10V Precision Viltage Reference 10V的精密Viltage参
10V Precision Viltage Reference 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, MBCY8
10 V Precision Voltage Reference
|
AD[Analog Devices]
Analog Devices, Inc.
|
| RS485 RS-422 RS-485 |
Vernetzung von bis zu 32 Einheiten per RS485-Bus
RS-422 AND RS-485 APPLICATION NOTE
|
List of Unclassifed Manufacturers
|
| Z0220516PSCR4292 Z0220516SSC1961 Z0220516SSCR3641 |
Modem Controller 调制解调器控制器
V2.22 Bis Modem Controller(V2.22Bis璋??瑙ｈ??ㄦ??跺?)
|
ZiLOG, Inc.
ZILOG INC
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| GRM219R61A475K |
Chip Monolithic Ceramic Capacitor 0805 X5R 4.7μF 10V
Chip Monolithic Ceramic Capacitor 0805 X5R 4.7レF 10V
|
Murata Manufacturing Co., Ltd.
|
| GRM2167U1A333J |
Chip Monolithic Ceramic Capacitor 0805 U2J 0.033μF 10V
Chip Monolithic Ceramic Capacitor 0805 U2J 0.033レF 10V
|
Murata Manufacturing Co., Ltd.
|
| GRM2197U1A563J |
Chip Monolithic Ceramic Capacitor 0805 U2J 0.056μF 10V
Chip Monolithic Ceramic Capacitor 0805 U2J 0.056レF 10V
|
Murata Manufacturing Co., Ltd.
|
