| PART |
Description |
Maker |
| RE46C126 |
CMOS Ionization Smoke Detector ASIC with Interconnect
|
RANDE
R & E International, Inc.
|
| RE46C122 |
CMOS Ionization Smoke Detector ASIC with Interconnect and Timer Mode
|
R & E International, Inc.
|
| RE46C122 |
CMOS Ionization Smoke Detector ASIC with Interconnect and Timer Mode
|
Microchip Technology
|
| RE46C152 |
CMOS Ionization Smoke Detector ASIC with Interconnect, Timer Mode and Tone Select
|
Microchip Technology
|
| RE46C162E16F RE46C163E16F RE46C162E |
CMOS Ionization Smoke Detector ASIC with Interconnect, Timer Mode and Alarm Memory
|
Microchip Technology Inc.
|
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| ICL7621 ICL7621DCBA ICL7621DCBA-T ICL7621DCPA ICL7 |
(ICL7621 / ICL7641 / ICL7642) Dual/Quad / Low Power CMOS Operational Amplifiers
High-Performance Impact-X<TM> PAL<R> Circuits 20-CFP -55 to 125
Dual/Quad, Low Power CMOS Operational Amplifiers
Dual/Quad Low Power CMOS Operational Amplifiers
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM（带单片使能
2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM6264B KM6264BLP-7L KM6264BLG-10 KM6264BLG-10L KM |
8K x 8 bit CMOS static RAM, 100ns, low low power
8K x 8 bit Low Power CMOS Static RAM
8Kx8 bit Low Power CMOS Static RAM 8Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EDI8810HL EDI8810L EDI8810H |
5V ( /-10%),8K x 8 static RAM CMOS, low power monolithic
Low Power 6T CMOS Monolithic SRAM
|
White Electronic Designs
ETC
List of Unclassifed Manufacturers
|
| K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
