| PART |
Description |
Maker |
| MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| CXA1787N |
2GHz-band PLL IC for Mobile Communications
|
SONY[Sony Corporation]
|
| CXA1787N |
2GHz-band PLL IC for Mobile Communications
|
SONY
|
| MGFC36V3742A04 MGFC36V3742A |
3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V6472A |
6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC38V6472_97 MGFC38V6472 MGFC38V647297 |
6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V6472A04 MGFC39V6472A |
6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC41V3642_04 MGFC41V3642 |
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V3642A_04 MGFC45V3642A MGFC45V3642A04 |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V3742 |
3.7 - 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET 3.7 - 4.2GHz波段16周内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| BFP93 BFP93A Q62702-F1144 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-253
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
