PART |
Description |
Maker |
M67706 |
RF POWER MODULE 806-870MHz, 7.5V, 4W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
RA20H8087M-E01 RA20H8087M-01 RA20H8087M |
806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO 806-825/ 851-870MHz 20W 12.5V 3 Stage Amp. For MOBILE RADIO 806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO 806-825 / 851 - 870MHz 202.5V阶段制造。对于移动通信
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
RA20H8087M11 RA20H8087M-101 |
RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor Mitsubishi Electric Sem...
|
D8740250GT |
GaAs Power Doubler, 40 - 870MHz, 25.0dB min. Gain @ 870MHz, 375mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
D8740220GT |
GaAs Power Doubler Hybrid 40 - 870MHz 砷化镓功率倍增混合40 - 870MHz
|
Electronic Theatre Controls, Inc. ETC
|
S8740280GT |
GaAs Push Pull Hybrid 40 - 870MHz 28.0dB min. Gain @ 870MHz 260mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
S8740220 |
Si Push Pull, 40 - 870MHz, 21.5dB min. Gain @ 870MHz, 235mA max. @ 24VDC Si Push Pull, 40 - 870MHz, 18.5dB min. Gain @870MHz, 240mA max. @ 24VDC
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
RD07MUS2B RD07MUS2B10 |
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W
|
Mitsubishi Electric Semiconductor
|
MPS-080817P-85 |
806 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
MicroWave Technology, Inc.
|
PXA320 |
Cost-Effective, Scalable Performance up to 806 MHz for Power-Efficient, High-End Multimedia Handsets, Embedded Solutions, and Enterprise-Class Devices
|
Marvell Technology Group Ltd.
|