| PART |
Description |
Maker |
| LH5420-P-35 LH5420-P-30 LH5420-P-25 |
256 x 36 x 2 Bidirectional FIFO 256 × 36 × 2双向先进先出
|
Sharp Corporation
Sharp, Corp.
|
| TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五（公报）最大|的DO - 215AA
|
ITT, Corp.
|
| IDT72V70190 IDT72V70190TF IDT72V70190PF |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
TSI-TDM Switches
|
IDT[Integrated Device Technology]
|
| AT93C66B-SSHM-T AT93C56B-SSHM-T |
3-wire Serial EEPROM 2K (256 x 8 or 128 x 16) and 4K (512 x 8 or 256 x 16)
|
ATMEL Corporation
|
| M3488Q1 1424 M3488B1 |
256 X 256 DIFGITAL SWITCHING MATRIX
From old datasheet system
256 X 256 DIFGITAL SWITCHING MATRIX
|
ST Microelectronics
STMicroelectronics
|
| MT8985 |
256 x 256 Channels (8 TDM Streams at 2.048 Mbps) Non-blocking Enhance Digital Switch (EDX) with Constant Delay Mode
|
Zarlink Semiconductor
|
| CDP1822 CDP1822CD CDP1822CDX CDP1822CE CDP1822CEX |
256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, PDIP22
256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, CDIP22
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| HB52RF329E2 HB52RF329E2-75F |
256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
SYNCHRONOUS DRAM MODULE, DMA168
|
Hitachi,Ltd.
|
| CAT5251YI-00-T2 CAT5251WI-00-T1 CAT5251WI-50-T1 |
DPP, NV, Quad 256 taps, SPI QUAD 100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO24
|
Rectron Semiconductor
|
