| PART |
Description |
Maker |
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F1208U0M-YIB0 K9F1208U0M-YCB0 DSK9F1208U0M |
64M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9 |
64M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K5P6480YCM-T085 |
64M Bit (8Mx8) Nand Flash Memory / Data Sheet
|
Samsung Electronic
|
| K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
3.3V Differential Transceiver 8-PDIP -40 to 85
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
COILTRONICS RoHS Compliant: Yes 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| K9F1208B0C K9F1208X0C K9F1208R0CJIB00 |
64M x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
| K9WAG08U1A-I K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P |
2G X 8 FLASH 2.7V PROM, 20 ns, PDSO48
4G X 8 FLASH 2.7V PROM, 30 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
|
SEMIKRON
http://
Samsung semiconductor
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MX29LV640MBXBI-90G MX29LV640MTXBI-90 MX29LV640MTXB |
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PBGA63
|
Macronix International Co., Ltd.
|
| K8D6316UBM-TI08 K8D638UTM-DI09 K8D638UTM-FC09 K8D6 |
4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
http://
|
