| PART |
Description |
Maker |
| 2N90L-TN3-R 2N90G-TN3-R 2N90G-TF3-T 2N90L-TF3-T |
2 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 10N90L-TF1-T 10N90G-TF1-T 10N90G-TA3-T 10N90L-TA3- |
10 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| SDR529SMS SDR526 SDR526SMS SDR527 SDR527SMS SDR528 |
3 AMPS 600 - 900 VOLTS 35 nsec HYPER FAST RECTIFIER
|
Solid States Devices, I...
SSDI[Solid States Devices, Inc]
|
| MGSF2N02E MGSF2N02ELT1 MGSF2N02ELT1G MGSF2N02ELT3 |
2.8 Amps, 20 Volts, N−Channel SOT−23 2.8 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB
2.8 Amps, 20 Volts, N-Channel SOT-23
2.8 Amps, 20 Volts, N−Channel SOT−23
Power MOSFET 2.8 Amps, 20 Volts
|
ONSEMI[ON Semiconductor]
|
| NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK
Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK
Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK
LASER MOD 670NM .95MW MVP ROUND
LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| MUR1100E MUR190E ON2734 |
1 A, 900 V, SILICON, SIGNAL DIODE
ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| NTMD3P03R2-D NTMD3P03R2 NTMD3P03R2/D |
Power MOSFET -3.05 Amps-30 Volts
Power MOSFET -3.05 Amps, -30 Volts Dual P?Channel SO(-3.05 A, -30 V，双P通道,SO-8封装的功率MOSFET)
Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SO-8
|
ON Semiconductor
|
| NTMD6P02R2 NTMD6P02R2-D NTMD6P02 |
Power MOSFET 6 Amps, 20 Volts P?Channel SO, Dual(6A0V，双P沟道SO-8封装的功率MOSFET)
Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual
|
ONSEMI[ON Semiconductor]
|
| NTB45N06LT4 NTB45N06LT4G NTP45N06L NTB45N06L NTB45 |
Power MOSFET 45 Amps, 60 Volts, Logic Level
45 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK
|
ONSEMI[ON Semiconductor]
|
| MMDFS3P303 MMDFS3P303R2 MMDFS3P303-D |
Power MOSFET 3 Amps / 30 Volts
Power MOSFET 3 Amps, 30 Volts P-Channel SO-8, FETKY
|
ONSEMI[ON Semiconductor]
|
| SPD66201 SPD6620SMSTXV SPD6624SMSS |
1.5 - 2 AMPS 200 ─ 1000 VOLTS 30 60 nsec ULTRA FAST RECOVERY RECTIFIER 2 A, 200 V, SILICON, RECTIFIER DIODE
1.5 - 2 AMPS 200 ─ 1000 VOLTS 30 60 nsec ULTRA FAST RECOVERY RECTIFIER 1.5 A, 900 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc
Solid State Devices, Inc.
|
