| PART |
Description |
Maker |
| DPZ128X32IV3-12I DPZ128X32IV3-20M DPZ128X32IV3-15B |
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Air Cost Control
EUPEC GMBH ?CO KG
Vicor, Corp.
|
| PUMA2F16006M-90 PUMA2F16006-90 PUMA2F16006M-120E P |
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, TSSOP
BGA, ROHS-A, IND TEMP, T&R(ARM)
BGA,GREEN,IND TEMP,T&R(ARM)
x32 Flash EEPROM Module X32号，闪存EEPROM模块
EEPROM EEPROM
|
Infineon Technologies AG
Amphenol Tuchel
|
| PUMA67F16006A-80E PUMA67F16006A-12E PUMA67F16006AI |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
120NS, SOIC, IND TEMP(EEPROM)
70NS, PDIP, IND TEMP(EEPROM)
120NS, TSOP, COM TEMP(EEPROM)
200NS, PLCC, COM TEMP(EEPROM)
DIE(EEPROM)
90NS, PGA, 883C; LEVEL B FULLY COMPLIANT(EEPROM)
120NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
120NS, PLCC, IND TEMP(EEPROM) X32号，闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Lattice Semiconductor, Corp.
Amphenol, Corp.
|
| PUMA2E1000LM-90/X405 PUMA2E1000LI-70 PUMA2E1000I-7 |
x32 EEPROM Module X32号的EEPROM模块
|
PUI Audio, Inc.
|
| WE128K32-120G1TC WE128K32-120G1TIA WE128K32-120G2T |
x32 EEPROM Module
EEPROM EEPROM
|
PATLITE, Corp.
Lineage Power, Corp.
|
| HMF51232J4V-55 HMF51232J4V-70 HMF51232J4V-120 HMF5 |
FLASH-ROM MODULE 2MByte (512K x32-Bit) - 68-Pin JLCC
|
Hanbit Electronics Co.,Ltd
|
| M58LW064 M58LW064BT M58LW064A150T6T M58LW064AZA M5 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories 64兆位x16和x16/x32，块擦除低压闪存
|
意法半导
STMicroelectronics N.V.
|
| KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
| ACT-F1288N-060P7Q ACT-F1288N-060P4T ACT-F1288N-060 |
EEPROM EEPROM
Cable Gland (Clamp); Connector Shell Size:24; Leaded Process Compatible:No; Length:2.56"; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 行为F128K8高兆位闪存单片
128K X 8 FLASH 5V PROM MODULE, 60 ns, CDIP32 HERMETICALLY SEALED, CERAMIC, DIP-32
128K X 8 FLASH 5V PROM MODULE, 70 ns, CDIP32 HERMETICALLY SEALED, CERAMIC, DIP-32
128K X 8 FLASH 5V PROM MODULE, 60 ns, CDFP32 HERMETICALLY SEALED, CERAMIC, FP-32
128K X 8 FLASH 5V PROM MODULE, 70 ns, CDFP32 HERMETICALLY SEALED, CERAMIC, FP-32
ACT-F128K8 High Speed 1 Megabit Monolithic FLASH 行为F128K8高兆位闪存单片
ACT-F128K8 High Speed 1 Megabit Monolithic FLASH 行为F128K8高1兆位闪存单片
Retriggerable monostable multivibrator 14-PDIP 0 to 70
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset 16-SO 0 to 70
Retriggerable monostable multivibrator 14-SOIC 0 to 70
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset 16-PDIP 0 to 70
Dual J-K Negative-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70
D21 - BACKSHELL ENVIRON STRT MIL
D52 - BACKSHELL ENVIRON STRT MIL
CONNECTOR ACCESSORY
Retriggerable monostable multivibrator 14-SO 0 to 70
|
Aeroflex Circuit Techno...
Samsung Semiconductor Co., Ltd.
SUSUMU Co., Ltd.
Aeroflex, Inc.
Aeroflex Inc.
http://
|
| DPZ512X16IH3-17M DPZ512X16IH3-17I DPZ512X16IH3-17B |
x16 Flash EEPROM Module x16闪存EEPROM模块
|
TT electronics Semelab, Ltd.
Micro Commercial Components, Corp.
|
| EDI7F341MV EDI7F341MV150BNC EDI7F2341MV120BNC |
1 Meg x 32 Flash Module(1Megx32闪速存储器模块(存取时间12050ns
EEPROM
|
White Electronic Designs Corporation
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
